Gated resonant tunneling diode

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S237000, C438S508000, C438S508000

Reexamination Certificate

active

07943450

ABSTRACT:
A gated resonant tunneling diode (GRTD) that operates without cryogenic cooling is provided. This GRTD employs conventional CMOS process technology, preferably at the 65 nm node and smaller, which is different from other conventional quantum transistors that require other, completely different process technologies and operating conditions. To accomplish this, the GRTD uses a body of a first conduction type with a first electrode region and a second electrode region (each of a second conduction type) formed in the body. A channel is located between the first and second electrode regions in the body. A barrier region of the first conduction type is formed in the channel (with the doping level of the barrier region being greater than the doping level of the body), and a quantum well region of the second conduction type formed in the channel. Additionally, the barrier region is located between each of the first and second electrode regions and the quantum well region. An insulating layer is formed on the body with the insulating layer extending over the quantum well region and at least a portion of the barrier region, and a control electrode region is formed on the insulating layer.

REFERENCES:
patent: 5093699 (1992-03-01), Weichold et al.
patent: 7436029 (2008-10-01), Doris et al.
patent: 2006/0270169 (2006-11-01), Rao
patent: 2007/0138565 (2007-06-01), Datta et al.
patent: 2007/0272916 (2007-11-01), Wang et al.
patent: 2007/0290265 (2007-12-01), Augusto et al.
patent: 2008/0258134 (2008-10-01), Mears et al.
patent: WO2007002043 (2007-01-01), None
“Junction Capacitance Reduction Due to Self-Aligned Pocket Implantation in Elevated Source/Drain NMOSFETs,” IEEE Transactions on Electron Devices, vol. 48, No. 9, Sep. 2001, pp. 1969-1974 (Naruhisa Miura, Yuji Abe, Kohei Sugihara, Toshiyuki Oishi, Taisuke Furukawa, Takumi Nakahata,Katsuomi Shiozawa, Shigemitsu Maruno, and Yasunori Tokuda).
“Single and Multiband Modeling of Quantum Electron Transport Through Layered Semiconductor Devices,” J. Appl. Phys., vol. 81, No. 12, Jun. 15, 1997, pp. 7845-7869 (Roger Lake, Gerhard Klimeck, R. Chris Bowen, and Dejan Jovanovic).

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Gated resonant tunneling diode does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Gated resonant tunneling diode, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Gated resonant tunneling diode will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2705690

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.