Gated field effect devices

Details Gated field effect devices Gated field effect devices

2005-10-19

2008-10-28

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S321000, C257S324000, C257S406000, C257SE29303

Reexamination Certificate

active

07442977

ABSTRACT:
This invention includes gated field effect devices, and methods of forming gated field effect devices. In one implementation, a gated field effect device includes a pair of source/drain regions having a channel region therebetween. A gate is received proximate the channel region between the source/drain regions. The gate has a gate width between the source/drain regions. A gate dielectric is received intermediate the channel region and the gate. The gate dielectric has at least two different regions along the width of the gate. The different regions are characterized by different materials which are effective to define the two different regions to have different dielectric constants k. Other aspects and implementations are contemplated.

REFERENCES:
patent: 4814842 (1989-03-01), Nakagawa et al.
patent: 4994888 (1991-02-01), Taguchi et al.
patent: H000986 (1991-11-01), Codella et al.
patent: 5124272 (1992-06-01), Saito et al.
patent: 5352618 (1994-10-01), Larsen et al.
patent: 5498290 (1996-03-01), Matossian et al.
patent: 5554876 (1996-09-01), Kusunoki et al.
patent: 5561072 (1996-10-01), Saito
patent: 5739066 (1998-04-01), Pan
patent: 5759899 (1998-06-01), Saito
patent: 6114735 (2000-09-01), Batra et al.
patent: 6225669 (2001-05-01), Long et al.
patent: 6255165 (2001-07-01), Thurgate et al.
patent: 6291865 (2001-09-01), Lee
patent: 6297106 (2001-10-01), Pan et al.
patent: 6348385 (2002-02-01), Cha et al.
patent: 6417085 (2002-07-01), Batra et al.
patent: 6495474 (2002-12-01), Rafferty et al.
patent: 6495890 (2002-12-01), Ono
patent: 6514808 (2003-02-01), Samavedam et al.
patent: 6563183 (2003-05-01), En et al.
patent: 6586808 (2003-07-01), Xiang et al.
patent: 6632714 (2003-10-01), Yoshikawa
patent: 6657267 (2003-12-01), Xiang et al.
patent: 2001/0017390 (2001-08-01), Long et al.
patent: 2001/0038123 (2001-11-01), Yu
patent: 2002/0135030 (2002-09-01), Horikawa
patent: 2002/0153579 (2002-10-01), Yamamoto
patent: 2002/0163039 (2002-11-01), Clevenger et al.
patent: 2003/0092238 (2003-05-01), Eriguchi
patent: 2004/0180482 (2004-09-01), Noda
patent: 2004/0185608 (2004-09-01), Oh et al.
patent: 2005/0224897 (2005-10-01), Chen et al.
patent: 0507567 (1992-07-01), None
patent: 0507667 (1992-07-01), None
patent: 1067597 (2001-01-01), None
patent: 1089344 (2001-04-01), None
patent: 1271632 (2003-01-01), None
patent: 1996181309 (1996-07-01), None
patent: WO PCT/US05/19009 (2008-02-01), None

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