Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-01-09
2007-01-09
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S405000, C257S406000, C257S410000, C257S411000
Reexamination Certificate
active
10861744
ABSTRACT:
This invention includes gated field effect devices, and methods of forming gated field effect devices. In one implementation, a gated field effect device includes a pair of source/drain regions having a channel region therebetween. A gate is received proximate the channel region between the source/drain regions. The gate has a gate width between the source/drain regions. A gate dielectric is received intermediate the channel region and the gate. The gate dielectric has at least two different regions along the width of the gate. The different regions are characterized by different materials which are effective to define the two different regions to have different dielectric constants k. Other aspects and implementations are contemplated.
REFERENCES:
patent: 4814842 (1989-03-01), Nakagawa et al.
patent: 4994888 (1991-02-01), Taguchi et al.
patent: 5496290 (1996-03-01), Matossian et al.
patent: 5554876 (1996-09-01), Kusunoki et al.
patent: 5561072 (1996-10-01), Saito
patent: 5739066 (1998-04-01), Pan
patent: 6114735 (2000-09-01), Batra et al.
patent: 6225669 (2001-05-01), Long et al.
patent: 6255165 (2001-07-01), Thurgate et al.
patent: 6291865 (2001-09-01), Lee
patent: 6297106 (2001-10-01), Pan et al.
patent: 6348385 (2002-02-01), Cha et al.
patent: 6417085 (2002-07-01), Batra et al.
patent: 6495474 (2002-12-01), Rafferty et al.
patent: 6495890 (2002-12-01), Ono
patent: 6514808 (2003-02-01), Samavedam et al.
patent: 6563183 (2003-05-01), En et al.
patent: 6586808 (2003-07-01), Xiang et al.
patent: 6632714 (2003-10-01), Yoshikawa
patent: 2001/0017390 (2001-08-01), Long et al.
patent: 2001/0038123 (2001-11-01), Yu
patent: 2002/0135030 (2002-09-01), Horikawa
patent: 2002/0153579 (2002-10-01), Yamamoto
patent: 2002/0163039 (2002-11-01), Clevenger et al.
patent: 2003/0092238 (2003-05-01), Eriguchi
patent: 1067597 (2001-01-01), None
patent: 1089344 (2001-04-01), None
patent: 1271632 (2003-01-01), None
Basceri Cem
Manning H. Montgomery
Parekh Kunal R.
Sandhu Gurtej S.
Flynn Nathan J.
Tran Tan
Wells St. John P.S.
LandOfFree
Gated field effect device comprising gate dielectric having... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Gated field effect device comprising gate dielectric having..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Gated field effect device comprising gate dielectric having... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3752794