Gated diode nonvolatile memory process

Details Gated diode nonvolatile memory process Gated diode nonvolatile memory process

2007-01-02

2008-09-02

Geyer, Scott B. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S288000, C438S328000, C257S288000, C257S544000, C257SE21053, C257SE21351, C257SE21662

Reexamination Certificate

active

07419868

ABSTRACT:
A gated diode nonvolatile memory cell with a charge storage structure includes a diode structure with an additional gate terminal. Various embodiments may include or exclude a diffusion barrier structure between the diode nodes. Example embodiments include the individual memory cell, an array of such memory cells, methods of operating the memory cell or array of memory cells, and methods of manufacturing the same.

REFERENCES:
patent: 5814853 (1998-09-01), Chen
patent: 6180444 (2001-01-01), Gates et al.
patent: 6690601 (2004-02-01), Yeh et al.
patent: 2006/0073657 (2006-04-01), Herner et al.
patent: 2007/0131999 (2007-06-01), Tsai et al.
patent: 2007/0133273 (2007-06-01), Liao et al.

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