Gate turn-off thyristor and power convertor using the same

Details Gate turn-off thyristor and power convertor using the same Gate turn-off thyristor and power convertor using the same

1993-02-17

1995-10-17

Sikes, William L.

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Bidirectional rectifier with control electrode

257138, 257139, 257147, 257155, H01L 2968, H01L 2972, H01L 2976

Patent

active

054593387

ABSTRACT:
A gate turn-off thyristor having a p-emitter layer in the anode side, an n-base layer, a p-base layer and an n-emitter layer in the cathode side. The n-base layer is composed of a first layer portion adjacent to the p-emitter layer, a second layer portion adjacent to the p-base layer and having a lower impurity concentration than the first layer portion, and is constituted by a structure which alters a travelling path of positive holes injected from the p-emitter layer.

REFERENCES:
patent: 4654679 (1987-03-01), Muraoka
patent: 4745513 (1988-05-01), McMurray
Patent Abstracts of Japan, vol. 14, No. 515 (E-1000), Nov. 13, 1990.
Patent Abstracts of Japan, vol. 13, No. 184, (E-751), Apr. 28, 1989.

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