Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Multiple layers
Reexamination Certificate
2007-05-15
2007-05-15
Lindsay, Jr., Walter L. (Department: 2812)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Multiple layers
C438S285000, C438S287000, C257SE21409, C257SE21129
Reexamination Certificate
active
11013838
ABSTRACT:
A method of fabricating a semiconductor device including providing a semiconductor heterostructure, the heterostructure having a relaxed Si1-xGexlayer on a substrate, a strained channel layer on the relaxed Si1-xGexlayer, and a Si1-yGeylayer; removing the Si1-yGeylayer; and providing a dielectric layer. The dielectric layer includes a gate dielectric of a MISFET. In alternative embodiments, the heterostructure includes a SiGe spacer layer and a Si layer.
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Office Action inInter PartesReexamination, Patent No. 6,846,715, Aug. 30, 2006.
Order Granting/Denying Request forInter PartesReexamination, Patent No. 6,846,715, Aug. 30, 2006.
Currie Matthew
Fitzgerald Eugene A.
Hammond Richard
AmberWave Systems Corporation
Goodwin & Procter LLP
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