Gate structures in semiconductor devices

Details Gate structures in semiconductor devices Gate structures in semiconductor devices

2011-04-19

2011-04-19

Mandala, Victor (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S321000, C257SE29300

Reexamination Certificate

active

07928498

ABSTRACT:
A gate structure includes an insulation layer on a substrate, a first conductive layer pattern on the insulation layer, a metal ohmic layer pattern on the first conductive layer pattern, a diffusion preventing layer pattern on the metal ohmic layer pattern, an amorphous layer pattern on the diffusion preventing layer pattern, and a second conductive layer pattern on the amorphous layer pattern. The gate structure may have a low sheet resistance and desired thermal stability.

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patent: 10-0673902 (2007-01-01), None
patent: 10-0681211 (2007-02-01), None

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