Gate structures having sidewall spacers using selective...

Details Gate structures having sidewall spacers using selective... Gate structures having sidewall spacers using selective...

2006-06-27

2006-06-27

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S199000, C438S216000

Reexamination Certificate

active

07067364

ABSTRACT:
Gate stacks with sidewall spacers having improved profiles to suppress or eliminate void formation between the gate stacks during gap-filling is disclosed, along with a method of forming the gate structures over a semiconductor substrate. A gate dielectric layer is formed on a semiconductor substrate. Then, a gate stack24having a sidewall is formed over the gate dielectric layer. The gate stack24comprises a conductive layer28and a hard mask30overlying the conductive layer28. A liner32is selectively deposited over the gate stack24such that the liner32is deposited on the hard mask30at a rate lower than the rate of deposition on the conductive layer28. Thus, the liner32is substantially thinner on the hard mask30than on the conductive layer28. A nitride spacer is formed over34the liner32. A PMD layer is formed over the resultant structure, filling the gaps between adjacent gate stacks and substantially free of voids.

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