Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation
Reexamination Certificate
2005-06-28
2005-06-28
Zarabian, Amir (Department: 2822)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
Insulated gate formation
C438S653000, C438S655000, C438S684000
Reexamination Certificate
active
06911384
ABSTRACT:
A gate structure for a semiconductor transistor is disclosed. In an exemplary embodiment, the gate structure includes a lower polysilicon region doped at a first dopant concentration and an upper polysilicon region doped at a second concentration, with the second concentration being different than the first concentration. A conductive barrier layer is disposed between the lower and the upper polysilicon regions, wherein the conductive barrier layer prevents diffusion of impurities between the lower and the upper polysilicon regions.
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Dokumaci Omer
Doris Bruce B.
Gluschenkov Oleg
Mandelman Jack A.
Radens Carl
Cantor & Colburn LLP
Jaklitsch Lisa U.
Novacek Christy
Zarabian Amir
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