Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2009-06-16
2010-12-28
Doan, Theresa T (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S315000, C257S316000, C438S267000
Reexamination Certificate
active
07859041
ABSTRACT:
A gate structure of a semiconductor device comprising a silicon substrate having a field oxide film, a plurality of gates formed by sequentially stacking a first gate dielectric film, a first gate conductive film, and a gate silicide film on the silicon substrate. a thermal oxide film formed on a side of the first gate conductive film, a plurality of trenches formed between the gates, a second gate oxide film formed on an interior wall of each trench; and a second conductive film formed in a spacer shape on a predetermined region of the second gate oxide film, and on a side of the first gate conductive film, the gate silicide film and the thermal oxide film.
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patent: 5733812 (1998-03-01), Ueda et al.
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patent: 7037787 (2006-05-01), Fan et al.
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patent: 1019990053212 (1999-07-01), None
patent: 1020060004469 (2006-01-01), None
Chang Jun Soo
Eun Yong Seok
Kim Young Bog
Lee Min Yong
Doan Theresa T
Hynix / Semiconductor Inc.
Marshall & Gerstein & Borun LLP
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