Gate structure of a semiconductor device

Details Gate structure of a semiconductor device Gate structure of a semiconductor device

2006-12-26

2010-06-01

Bryant, Kiesha R (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S197000, C438S296000, C438S299000, C438S301000, C438S306000, C257SE29132, C257SE29133, C257SE21205

Reexamination Certificate

active

07727844

ABSTRACT:
Embodiments relate to a gate structure of a semiconductor device and a method of manufacturing the gate structure. An oxide layer may be formed on a silicon substrate before a gate insulating layer is formed. The oxide layer may be etched to form an opening exposing a channel area of the silicon substrate. After forming the gate insulating layer in the opening, a gate conductive layer may be deposited and etched to form a gate. The oxide layer may be continuously etched such that the oxide layer remains at both edge portions of the gate insulating layer. The oxide layer formed at both edge portions of the gate insulating layer may protect the gate insulating layer during a gate etching process, and may improve a reliability of the semiconductor device. Since a length of the gate insulating layer may become shorter than the length of the gate due to the protective oxide layer, the low-density source/drain junction may not overlap a lower portion of the gate insulating layer, which may improve a performance of the semiconductor device.

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