Gate Structure in flash memory cell and method of forming...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

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C438S757000

Reexamination Certificate

active

07125770

ABSTRACT:
The present invention relates to a gate structure of a flash memory cell and method of forming the same, and method of forming a dielectric film. The method of forming the dielectric film in the flash memory cell comprises the steps of preparing a wafer including a tunnel oxide film formed in a given region of a semiconductor substrate, a polysilicon film formed on the tunnel oxide film, and an oxide film and a silicon nitride film formed on the polysilicon film; preparing a work cell in which a voltage is applied to the rear side of the semiconductor substrate used as a work electrode in which the silicon nitride film is formed, a relative electrode and a reference electrode are kept by a given distance so that they can be immersed in electrolyte, and in which an ultraviolet rays source is formed on an upper side to illuminate an ultraviolet rays to a work electrode; and performing electro-chemical etch using silicon dissociation reaction for the wafer mounted on the work cell to form porosities in the silicon nitride film.

REFERENCES:
patent: 4853895 (1989-08-01), Mitchell et al.
patent: 5439838 (1995-08-01), Yang
patent: 5559048 (1996-09-01), Inoue
patent: 6265263 (2001-07-01), Wu

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