Gate structure, and semiconductor device having a gate...

Details Gate structure, and semiconductor device having a gate... Gate structure, and semiconductor device having a gate...

2011-08-02

2011-08-02

Dickey, Thomas L (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE29345, C438S583000

Reexamination Certificate

active

07989892

ABSTRACT:
A gate structure can include a polysilicon layer, a metal layer on the polysilicon layer, a metal silicide nitride layer on the metal layer and a silicon nitride mask on the metal silicide nitride layer.

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patent: 2004/0232467 (2004-11-01), Otsuki et al.
patent: 2005/0017305 (2005-01-01), Koyama et al.
patent: 2008/0135936 (2008-06-01), Nakajima
patent: 2006-093182 (2006-04-01), None
patent: 1020000028923 (2000-05-01), None
patent: 1020050008050 (2005-01-01), None
patent: 1020060100856 (2006-09-01), None

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