Gate structure and method of making the same

Details Gate structure and method of making the same Gate structure and method of making the same

2009-07-14

2011-12-13

Lindsay, Jr., Walter L (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S283000, C257SE21415, C257SE21429

Reexamination Certificate

active

08076207

ABSTRACT:
A method of making a gate structure includes the following steps. First, a gate is formed. Then, a first silicon oxide layer, a silicon nitride layer, and a second silicon oxide layer are formed to cover the gate from bottom to top. Later, a dry etching is performed to etch the second silicon oxide layer. After that, a wet etching is performed to etch the silicon nitride layer and the first silicon oxide layer. The aforesaid wet etching is performed by utilizing an RCA cleaning solution. Furthermore, the silicon nitride layer is formed by the SINGEN process. Therefore, the first and second silicon oxide layer and the silicon nitride layer can be etched together by the RCA cleaning solution.

REFERENCES:
patent: 6251719 (2001-06-01), Wang
patent: 6706601 (2004-03-01), Liu
patent: 2008/0293199 (2008-11-01), Lin et al.

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