Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-09-12
2006-09-12
Wilson, Allan R. (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S391000, C257SE27062
Reexamination Certificate
active
07105891
ABSTRACT:
CMOS gate structure with metal gates having differing work functions by texture differences between NMOS and PMOS gates.
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Colombo Luigi
Rotondaro Antonio L. P.
Visokay Mark R.
Brady III W. James
Hoel Carlton H.
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
Wilson Allan R.
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