Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-05-27
2008-05-27
Pham, Hoai v (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S900000, C257SE27060
Reexamination Certificate
active
11463039
ABSTRACT:
A gate stack structure. The structure includes (a) a semiconductor region and (b) a gate stack on top of the semiconductor region. The gate stack includes (i) a gate dielectric region on top of the semiconductor region, (ii) a first gate polysilicon region on top of the gate dielectric region, and (iii) a second gate polysilicon region on top of the first gate polysilicon region and doped with a type of dopants. The structure further includes (c) a diffusion barrier region and a spacer oxide region on a side wall of the gate stack. The diffusion barrier region (i) is sandwiched between the gate stack and the spacer oxide region and (ii) is in direct physical contact with both the first and second gate polysilicon regions, and (iii) comprises a material having a property of preventing a diffusion of oxygen-containing materials through the diffusion barrier region.
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Martin Dale W.
Shank Steven M.
Triplett Michael C.
Tucker Deborah A.
Pham Hoai v
Sabo William D.
Schmeiser Olsen & Watts
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