Gate stack having nitride layer

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

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C257S369000, C257SE29157

Reexamination Certificate

active

08080453

ABSTRACT:
A semiconductor structure includes a semiconductor substrate, a gate layer containing silicon on the semiconductor substrate, a metallic layer on the gate layer, and a nitride layer on the metallic layer. The gate layer contains a P+region and an N+region.

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