Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-05-16
1998-01-06
Saadat, Mahshid D.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257336, 257344, 257349, 257408, 257 69, 257 70, H01L 2701, H01L 2712, H01L 310392
Patent
active
057058393
ABSTRACT:
A process has been developed in which narrow base width, lateral bipolar junction transistors, and narrow channel length MOSFET devices, can be simultaneously fabricated, using a silicon on insulator approach. Insulator sidewall spacer and gate processing is used to produce narrow base widths for enhanced collector-base device characteristics, in terms of transistor gain, switching speeds and junction breakdowns.
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Chung Steve S.
Hsu Ching-Hsiang
Liang Mong-Song
Wong Shyh-Chyi
Ackerman Stephen B.
Saadat Mahshid D.
Saile George O.
Taiwan Semiconductor Manufacturing Company , Ltd.
Wilson Allan R.
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