Gate of a semiconductor device and method for forming the same

Details Gate of a semiconductor device and method for forming the same Gate of a semiconductor device and method for forming the same

2008-05-27

2008-05-27

Pham, Hoai v (Department: 2892)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S198000, C438S253000, C257S021000

Reexamination Certificate

active

11458224

ABSTRACT:
Disclosed herein is a method for forming a gate structure in a semiconductor device. The method comprises forming a SiGe film on a predetermined region of a silicon substrate corresponding to a bit-line node portion where a bit-line junction is formed, growing a silicon film over the silicon substrate having the SiGe film formed thereon, selectively etching the SiGe film, embedding a dielectric material into a portion where the SiGe film is removed, forming a stepped profile on the silicon film by etching a predetermined portion of the silicon film such that the bit-line node portion is included in the stepped profile, and forming a gate on the silicon film having the stepped profile formed therein such that the gate overlaps the stepped profile. The dielectric pad prevents the bit-line junction from spreading downward upon operation of the gate, thereby enhancing a punch-through phenomenon.

REFERENCES:
patent: 6274913 (2001-08-01), Brigham et al.
patent: 6670253 (2003-12-01), Lee
patent: 7102187 (2006-09-01), Yoo
patent: 7244650 (2007-07-01), Suh
patent: 403053534 (1991-03-01), None

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