Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-06-21
2005-06-21
Loke, Steven (Department: 2811)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S585000, C438S591000, C438S595000
Reexamination Certificate
active
06908806
ABSTRACT:
A method of fabricating a semiconductor device having a gate stack structure that includes gate stack sidewall, the gate stack structure having one or more metal layers comprising a gate metalis provided. The gate metal is recessed away from the gate stack sidewall using a chemical etch. The gate metal of the gate stack structure is selectively oxidized to form a metal oxide that at least partly fills the recess.
REFERENCES:
patent: 5751048 (1998-05-01), Lee et al.
patent: 6380607 (2002-04-01), Seo
patent: 6417558 (2002-07-01), Shirai
patent: 6448140 (2002-09-01), Liaw
patent: 6531776 (2003-03-01), Lin et al.
Divakaruni Ramachandra
Gluschenkov Oleg
Malik Rajeev
Ramachandran Ravikumar
Yan Hongwen
Infineon - Technologies AG
Loke Steven
Slater & Matsil L.L.P.
LandOfFree
Gate metal recess for oxidation protection and parasitic... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Gate metal recess for oxidation protection and parasitic..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Gate metal recess for oxidation protection and parasitic... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3475339