Gate linewidth tailoring and critical dimension control for...

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device

Reexamination Certificate

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C430S030000, C430S311000, C430S313000, C430S317000, C430S329000, C438S714000, C438S725000, C216S049000, C216S059000, C216S067000

Reexamination Certificate

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06864041

ABSTRACT:
A method of fabricating an electronic chip on a wafer in which a first mask at a predetermined lower resolution is developed on the wafer and then etched under a first set of conditions for a predetermined period to achieve a mask that is below the resolution limit of current lithography. The etched mask is then used as a hard mask for etching material on a lower layer.

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