Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2005-03-29
2005-03-29
Phan, Trong (Department: 2818)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185290
Reexamination Certificate
active
06873550
ABSTRACT:
A nitride read only memory (NROM) cell can be programmed by applying a ramp voltage to the gate input, a constant voltage to one of the two source/drain regions, and a ground potential to the remaining source/drain region. In order to erase the NROM cell, a constant voltage is coupled to the gale input. A constant positive current is input to one of the source/drain regions. The remaining source/drain region is either allowed to float, is coupled to a ground potential, or is coupled to the first source/drain region.
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Leffert Jay & Polglaze P.A.
Micro)n Technology, Inc.
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