Gate electrodes of HVMOS devices having non-uniform doping...

Details Gate electrodes of HVMOS devices having non-uniform doping... Gate electrodes of HVMOS devices having non-uniform doping...

2008-07-09

2010-10-19

Coleman, W. David (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE29152

Reexamination Certificate

active

07816744

ABSTRACT:
A semiconductor structure includes a semiconductor substrate; a first high-voltage well (HVW) region of a first conductivity type overlying the semiconductor substrate; a second well region of a second conductivity type opposite the first conductivity type overlying the semiconductor substrate and laterally adjoining the first well region; a gate dielectric extending from over the first well region to over the second well region; a drain region in the second well region; a source region on an opposite side of the gate dielectric than the drain region; and a gate electrode on the gate dielectric. The gate electrode includes a first portion directly over the second well region, and a second portion directly over the first well region. The first portion has a first impurity concentration lower than a second impurity concentration of the second portion.

REFERENCES:
patent: 2006/0001050 (2006-01-01), Wang et al.

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