Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2011-01-11
2011-01-11
Thai, Luan C (Department: 2891)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S284000, C438S303000, C438S584000, C438S586000, C438S592000
Reexamination Certificate
active
07867859
ABSTRACT:
Semiconductor device performance is improved via a gate structure having a tunable effective workfunction and reduced gate depletion effects. According to an example embodiment, the design threshold voltage of a semiconductor device is adjusted in a manner that includes providing a gate having a workfunction that enables operation of the semiconductor device at a selected voltage. The gate is formed having two different conductive materials with different electric workfunctions that both significantly contribute to the overall workfunction of the gate. The relative composition, thickness, and arrangement of each of the two conductive materials is selected to attain a gate electrode workfunction that is different than the workfunctions of each of the two layers and that sets the threshold voltage of the semiconductor device. The adjustability of the effective workfunction of the gate electrode can be applied to a variety of semiconductor devices. The ability to reduce gate depletion effects also provides enhanced device current drive.
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EE 4253/6253 Lecture Notes, Sep. 7, 1998, pp. 39-45.
Gibbons James F.
Hoyt Judy L.
Hung Steven
Crawford & Maunu PLLC
Thai Luan C
The Board of Trustees of the Leland Stanford Junior University
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