Gate electrode structures and methods of manufacture

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S412000, C257SE27062, C438S592000

Reexamination Certificate

active

11185180

ABSTRACT:
Gate electrode structures used in field effect transistors and integrated circuits and methods of manufacture are disclosed. Improved work function and threshold modulation are provided by the methods and structures.

REFERENCES:
patent: 6551399 (2003-04-01), Sneh et al.
patent: 6630391 (2003-10-01), Agarwal et al.
patent: 6696333 (2004-02-01), Zheng et al.
patent: 6784096 (2004-08-01), Chen et al.
patent: 6790731 (2004-09-01), Zheng et al.
patent: 6794232 (2004-09-01), Zheng et al.
patent: 6797553 (2004-09-01), Adkisson et al.
patent: 6818517 (2004-11-01), Maes
patent: 6875271 (2005-04-01), Glenn et al.
patent: 6879009 (2005-04-01), Zheng et al.
patent: 2004/0106261 (2004-06-01), Huotari et al.
patent: 2004/0198069 (2004-10-01), Metzner et al.
patent: 2004/0219772 (2004-11-01), You et al.
patent: 2005/0032342 (2005-02-01), Forbes et al.
patent: 2005/0042865 (2005-02-01), Cabral, Jr. et al
Gao, Wei, et al., “Stacked Metal Layers as Gates for MOSFET Threshold Voltage Control”,Mat. Res. Soc. Symp. Proc. vol. 765, (2003),D1.4.1-D1.4.6.
Hung, Steven C. H., et al., “Improved Workfunction Tunability and EOT Control with Clustered ALD TaN/PVD Ta for Multilayer Metal Gate”,2005 Materials Research Society Spring Meeting, Mar. 28-Apr. 1, 2005 San Francisco, (Apr. 2005),paper No. 127094, Abstract No. CAG10.4.
Hung, Steven C. H., et al., “Multilayer Metallic Gate Electrode for Depletion Suppression and Tunable Workfunction”,Semiconductor Interface Specialists Conference, (Dec. 1, 2003).
Polishchuk, Igor, et al., “Dual Work Function Metal Gate CMOS Technology Using Metal Interdiffusion”,IEEE Electron Device Lettersvol. 22, No. 9, (Sep. 2001), 444-446.
Polishchuk, Igor, et al., “Polycrystalline silicon/metal stacked gate for threshold voltage control in metal-oxide-semiconductor field-effect transistors”,Applied Physics Letters, vol. 76, No. 14, (Apr. 3, 2000), 1938-1940.
Tsai, W., et al., “Surface preparation and interfacial stability of high-k dielectrics deposited by atomic layer chemical vapor deposition”,Microelectronic Engineeringvol. 65, (2003), 259-272.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Gate electrode structures and methods of manufacture does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Gate electrode structures and methods of manufacture, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Gate electrode structures and methods of manufacture will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3941774

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.