Gate electrode structures

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257S368000, C257S412000, C257SE27062, C438S592000

Reexamination Certificate

active

07541650

ABSTRACT:
Gate electrode structures used in field effect transistors and integrated circuits and methods of manufacture are disclosed. Improved work function and threshold modulation are provided by the methods and structures.

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