Gate electrode for semiconductor device

Details Gate electrode for semiconductor device Gate electrode for semiconductor device

1997-10-17

1998-12-22

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257413, 257900, H01L 27088

Patent

active

058523197

ABSTRACT:
A gate electrode in a semiconductor device comprising; a gate oxide layer formed on a semiconductor substrate, a polysilicon layer formed on the gate oxide layer, a silicide layer formed on the polysilicon layer and, a metal silicide layer formed on the silicide layer.

REFERENCES:
patent: 4874717 (1989-10-01), Neppl et al.
patent: 5115290 (1992-05-01), Murakami et al.
patent: 5341016 (1994-08-01), Prall et al.

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