Gate electrode and method of fabricating the same

Details Gate electrode and method of fabricating the same Gate electrode and method of fabricating the same

2005-03-01

2005-03-01

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S595000, C438S655000, C438S663000, C257S377000, C257S413000

Reexamination Certificate

active

06861319

ABSTRACT:
There is provided a method of fabricating a gate electrode, including the steps of (a) forming a gate oxide film at a surface of a semiconductor substrate, (b) forming a multi-layered structure on the gate oxide film, the multi-layered structure including a polysilicon layer formed on the gate oxide film, a refractive metal silicide layer formed on the polysilicon layer, and a silicon nitride layer formed on the refractive metal silicide layer, (c) thermally annealing the multi-layered structure in a nitrogen atmosphere to thereby form a silicon nitride film on sidewalls of the polysilicon layer and the refractive metal silicide layer, and (d) oxidizing the semiconductor substrate and the multi-layered structure.

REFERENCES:
patent: 5723893 (1998-03-01), Yu et al.
patent: 5851890 (1998-12-01), Tsai et al.
patent: 6136678 (2000-10-01), Adetutu et al.
patent: 20020110966 (2002-08-01), Lee
patent: 08-321613 (1996-12-01), None
patent: 09-307106 (1997-11-01), None
patent: 11-233451 (1999-08-01), None

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