Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-11-06
2007-11-06
Booth, Richard A. (Department: 2812)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C438S287000
Reexamination Certificate
active
11339393
ABSTRACT:
A MOSFET structure with high-k gate dielectric layer and silicon or metal gates, amorphizing treatment of the high-k gate dielectric layer as with a plasma or ion implantation.
REFERENCES:
patent: 6348373 (2002-02-01), Ma et al.
patent: 2001/0023120 (2001-09-01), Tsunashima et al.
Colombo Luigi
Rotondaro Antonio L. P.
Visokay Mark R.
Booth Richard A.
Brady III Wade J.
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
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