Gate dielectric and metal gate integration

Details Gate dielectric and metal gate integration Gate dielectric and metal gate integration

2007-11-20

2007-11-20

Chaudhari, Chandra (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S591000, C257SE21639

Reexamination Certificate

active

11043619

ABSTRACT:
A CMOS device is provided which comprises (a) a substrate (103); (b) a gate dielectric layer (107) disposed on the substrate, the gate dielectric comprising a metal oxide; (c) an NMOS electrode (105) disposed on a first region of said gate dielectric; and (d) a PMOS electrode (115) disposed on a second region of said gate dielectric, the PMOS electrode comprising a conductive metal oxide; wherein the surface of said second region of said gate dielectric comprises a material selected from the group consisting of metal oxynitrides and metal silicon-oxynitrides.

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