Gate defined Schottky diode

Details Gate defined Schottky diode Gate defined Schottky diode

2005-10-21

2009-06-09

Wilczewski, M. (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S200000, C438S210000, C438S380000, C257S577000, C257S624000, C257SE21053, C257SE21358, C257SE21359

Reexamination Certificate

active

07544557

ABSTRACT:
A Schottky diode exhibiting low series resistance is efficiently fabricated using a substantially standard CMOS process flow by forming the Schottky diode using substantially the same structures and processes that are used to form a field effect transistor (FET) of a CMOS IC device. Polycrystalline silicon, which is used to form the gate structure of the FET, is utilized to form an isolation structure between the Schottky barrier and backside structure of the Schottky diode. Silicide (e.g., cobalt silicide (CoSi2)) structures, which are utilized to form source and drain metal-to-silicon contacts in the FET, are used to form the Schottky barrier and backside Ohmic contact of the Schottky diode. Heavily doped drain (HDD) diffusions and lightly doped drain (LDD) diffusions, which are used to form source and drain diffusions of the FET, are utilized to form a suitable contact diffusion under the backside contact silicide.

REFERENCES:
patent: 5347161 (1994-09-01), Wu et al.
patent: 6825073 (2004-11-01), Wu
patent: 2003/0181011 (2003-09-01), Curro et al.
patent: 2004/0012066 (2004-01-01), Dietl et al.

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