Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having junction gate
Reexamination Certificate
2005-02-15
2005-02-15
Nelms, David (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having junction gate
C438S199000, C438S380000, C438S570000, C438S091000, C257S199000, C257S482000, C257S604000
Reexamination Certificate
active
06855587
ABSTRACT:
A new gate-controlled, negative resistance diode device is achieved. The device comprises, first, a semiconductor layer in a substrate. The semiconductor layer contains an emitter region and a barrier region. The barrier region is in contact with the emitter region and is laterally adjacent to the emitter region. The semiconductor layer contains a collector region. A drift region comprises the semiconductor layer between the barrier region and the collector region. Finally, a gate comprises a conductor layer overlying the drift region, the barrier region, and at least a part of the emitter region with an insulating layer therebetween. A method of manufacture is achieved.
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Huynh Andy
Nelms David
Taiwan Semiconductor Manufacturing Company
Thomas Kayden Horstemeyer & Risley
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