Gate circuit of combined field-effect and bipolar transistors

Details Gate circuit of combined field-effect and bipolar transistors Gate circuit of combined field-effect and bipolar transistors

1994-09-30

1997-02-04

Hudspeth, David R.

Electronic digital logic circuitry

Function of and, or, nand, nor, or not

Bipolar and fet

326103, H03K 1901

Patent

active

056002688

ABSTRACT:
A high-speed operation, low-power consumption gate circuit structure comprises a combination of complementary field-effect-transistors and bipolar transistors and discharge means for discharging accumulated charges from these transistors when the field-effect-transistors and bipolar transistors are turned off.

REFERENCES:
patent: 4301383 (1981-11-01), Taylor
Lin et al, "Complementary MOS-Bipolar Transistor Structure", I.E.E.E. Transactions on Electron Devices, vol. ED-16, No. 11, Nov. 1969.

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