Gate and CMOS structure and MOS structure

Details Gate and CMOS structure and MOS structure Gate and CMOS structure and MOS structure

2006-08-15

2006-08-15

Prenty, Mark V. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S407000

Reexamination Certificate

active

07091569

ABSTRACT:
Provided are a novel gate, a CMOS structure, and a MOS structure each of that has low resistance and excellent controllability. The gate is comprised of an intermetallic compound semiconductor that has an electric conductivity in a range of no less than 102S·m−1, nor more than 105S·m−1without impurities and has a band structure like that of a semiconductor.

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Takashi Ito et al., “VLSI no Hakumaku Gijutsu”, Maruzen Co., Ltd., pp. 171 to 181, Sep. 30, 1986.
Kazuo Maeda, “Saishin LSI Process Gijutsu (4th edition)”, Kogyo Chosakai Publishing Co., Ltd., pp. 397 to 399, Apr. 20, 1988.

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