4. Single-crystal, oriented-crystal, and epitaxy growth processes;
  5. Forming from vapor or gaseous state
  6. With decomposition of a precursor

Toyohiro Chikyo

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Gate and CMOS structure and MOS structure

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate

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Method for stabilizing oxide-semiconductor interface by...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Reexamination Certificate

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Thin film device and its fabrication method

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Between different group iv-vi or ii-vi or iii-v compounds...
Reexamination Certificate

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Profile ID: LFUS-PAI-P-2693575

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