Semiconductor device manufacturing: process – Chemical etching – Combined with coating step
Reexamination Certificate
2007-11-27
2007-11-27
Tran, Binh X. (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Combined with coating step
C438S702000, C438S723000, C438S743000
Reexamination Certificate
active
11420405
ABSTRACT:
Gas switching is used during an etch process to modulate the characteristics of the etch. The etch process comprises a sequence of at least three steps, wherein the sequence is repeated at least once. For example, the first step may result in a high etch rate of oxide (108) while the second step is a polymer coating steps and the third step results in a low etch rate of oxide and high etch rate of another material (114) and/or sputtering.
REFERENCES:
patent: 2004/0072430 (2004-04-01), Huang et al.
patent: 2006/0199370 (2006-09-01), Dai et al.
Celii Francis
Jiang Ping
Brady III W. James
Garner Jacqueline J.
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
Tran Binh X.
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