Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Patent
1998-06-09
2000-12-12
Utech, Benjamin L.
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
720723, 720743, H01L 21302
Patent
active
061598593
ABSTRACT:
The present invention is a process for thermal, vapor phase removal of silicon oxides and metal-containing contaminants from a surface of a substrate of a type used in manufacturing semiconductor devices comprising contacting the substrate at an elevated temperature at an elevated temperature appropriate to generate and maintain an effective amount of a cleaning reagent to form volatile by-products of the silicon oxides and the metal-containing contaminants and removing the volatile by-products from the surface, wherein the cleaning reagent is a complex of hydrogen fluoride and an oxygen-containing compound selected from the group consisting of one or more of trifluoroacetic acid, trifluoroacetic anhydride, 1,2-propanedione, a .beta.-diketone and a .beta.-diketoimine of the formula: ##STR1##
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Beck Scott Edward
Bohling David Arthur
George Mark Allen
Robertson, III Eric Anthony
Air Products and Chemicals Inc.
Chase Geoffrey L.
Umez-Eronini Lynette T.
Utech Benjamin L.
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