Gas mixture for etching a polysilicon electrode layer and etchin

Details Gas mixture for etching a polysilicon electrode layer and etchin Gas mixture for etching a polysilicon electrode layer and etchin

1998-07-13

2000-07-25

Utech, Benjamin L.

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

720742, 252 791, H01L 213065

Patent

active

060936533

ABSTRACT:
A gas mixture for etching a polysilicon electrode layer in a plasma etching apparatus, and a method for etching the electrode layer using the same. The etching gas mixture is a mixture of Cl.sub.2 gas and N.sub.2 gas, wherein the N.sub.2 gas is in the range of about 30% by volume of the total volume of Cl.sub.2 gas and N.sub.2 gas combined. In the electrode layer etching method of the present invention, the polysilicon electrode layer is formed on a semiconductor substrate. A mask pattern of an oxide or photoresist is then formed on the electrode layer. The electrode layer is etched using a plasma formed by the gas mixture of Cl.sub.2 gas and N.sub.2 gas, with the mask pattern functioning as an etching mask. An upper power source of the plasma etching apparatus delivers power in the range of about 500 to 1000 W, while the etching gas mixture is formed by supplying Cl.sub.2 gas at a rate of about 100 to 400 sccm, and N.sub.2 gas at a rate of about 3 to 15 sccm.

REFERENCES:
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patent: 5529197 (1996-06-01), Grewal
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patent: 5772833 (1998-06-01), Inazawa et al.
patent: 5795829 (1998-08-01), Shen

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