Coating apparatus – Gas or vapor deposition
Reexamination Certificate
2007-08-07
2007-08-07
Zervigon, Rudy (Department: 1763)
Coating apparatus
Gas or vapor deposition
C156S345290
Reexamination Certificate
active
10713258
ABSTRACT:
A gas injection apparatus for injecting a reactive gas into a reaction chamber of a semiconductor processing system includes an injector in contact with an inner surface of a wall of the reaction chamber. The injector has a plurality of nozzles through which the reactive gas is injected into the reaction chamber. A gas inlet penetrates the wall of the reaction chamber. A manifold is disposed between the wall of the reaction chamber and the injector, and supplies the reactive gas flowing through the gas inlet to the nozzles. Gas channels in the manifold are arranged on a plurality of levels to equalize the lengths of gas paths connecting the gas inlet to each of the plurality of nozzles. This configuration makes the flow rate of reactive gas supplied through each of the plurality of nozzles to the reaction chamber uniform.
REFERENCES:
patent: 5522931 (1996-06-01), Iwashita et al.
patent: 6001267 (1999-12-01), Os et al.
patent: 6402849 (2002-06-01), Kwag et al.
patent: 6415736 (2002-07-01), Hao et al.
patent: 6432831 (2002-08-01), Dhindsa et al.
patent: WO 143857 (2001-06-01), None
USPTO Translation of WO 01/43857 A1.
Kim Tae-wan
Ma Dong-joon
Navala Sergiy Yakovlevich
Tolmachev Yuri Nikolaevich
Lee & Morse P.C.
Samsung Electronics Co,. Ltd.
Zervigon Rudy
LandOfFree
Gas injection apparatus for semiconductor processing system does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Gas injection apparatus for semiconductor processing system, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Gas injection apparatus for semiconductor processing system will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3895631