Gas for selectively etching silicon nitride and process for sele

Details Gas for selectively etching silicon nitride and process for sele Gas for selectively etching silicon nitride and process for sele

1984-06-01

1985-07-16

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156653, 156657, 1566591, 204192E, 252 791, B44C 122, C03C 1500, C03C 2506

Patent

active

045294763

ABSTRACT:
A dry-etching gas suitable for selective etching of silicon nitride and a process for selectively dry-etching silicon nitride with the dry-etching gas are disclosed. Silicon nitride can be dry-etched with a higher selectivity or at a higher etching rate than silicon dioxide and silicon, and a process for fabricating semi-conductor devices can be simplified and devices with a novel structure can be realized.

REFERENCES:
patent: 3940506 (1976-02-01), Heinecke
patent: 4181564 (1980-01-01), Fogarty et al.
patent: 4377438 (1983-03-01), Moriya et al.

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