Gas flow restricting cathode system for ion implanter and...

Details Gas flow restricting cathode system for ion implanter and... Gas flow restricting cathode system for ion implanter and...

2006-01-10

2006-01-10

Berman, Jack I. (Department: 2881)

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

C250S42300F, C250S427000, C315S111810, C313S270000, C313S310000

Reexamination Certificate

active

06984831

ABSTRACT:
A cathode system having a cathode element configured to extend through an aperture in a wall of an arc chamber of an ion implanter system. A gas flow through a spacing between the cathode element and the aperture is restricted by a restriction member. A method of ionizing a source gas and a cathode element incorporating the restriction member are also provided.

REFERENCES:
patent: 5703372 (1997-12-01), Horsky et al.
patent: 6777686 (2004-08-01), Olson et al.
patent: WO 03/075305 (2003-09-01), None

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