Etching a substrate: processes – Gas phase etching of substrate – Application of energy to the gaseous etchant or to the...
Patent
1993-02-11
1995-09-19
Breneman, R. Bruce
Etching a substrate: processes
Gas phase etching of substrate
Application of energy to the gaseous etchant or to the...
156345, 216 79, H01L 2100
Patent
active
054512905
ABSTRACT:
Improved apparatus and a method for reducing polymerparticle contamination of semiconductor wafers being processed in a system for plasma-etching silicon dioxide. A quartz gas distribution plate contains a number of gas inlet holes having cross-sectional areas sufficiently small to prevent plasma from being present in the gas inlet holes to inhibit formation of polymer material and flaking of contamination particles therefrom. The gas inlet holes are formed on the surface of the quartz gas distribution plate directly over a wafer being processed. Alternatively, the gas inlet holes are formed in the quartz plate to radially extend to the peripheral edge of the quartz plate so that contamination particles, if any, fall outside the bounds of a wafer beneath the quartz plate. The method disclosed includes the step of feeding CHF.sub.3 gas through the gas inlet holes having cross-sectional areas sufficiently small to prevent formation of polymer within the holes and subsequent flaking and contamination of a wafer being processed.
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European Search Report.
Applied Materials Inc.
Breneman R. Bruce
Goudreau George
Morris Birgit E.
Sgarbossa Peter J.
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