Gas curtain continuous chemical vapor deposition production of s

Details Gas curtain continuous chemical vapor deposition production of s Gas curtain continuous chemical vapor deposition production of s

1980-07-28

1982-01-05

Clements, Gregory N.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156608, 156617SP, 156620, 118718, 118719, 118720, 422246, 422249, 422250, 427 95, 4272552, C30B 2508

Patent

active

043092411

ABSTRACT:
Apparatus and process for producing electronic-grade semiconductor bodies are disclosed wherein continuously-pulled slim rod which can be formed in situ from the reaction of a seed crystal and a molten semiconductor material source, is pulled into and through a chemical vapor deposition chamber, having a gas curtain along the inner wall, the slim rod surface being preheated before entry into the deposition chamber where it is simultaneously exposed to focused heating and thermally decomposable gaseous compounds in order to provide suitable surface reaction conditions on the slim rod for the decomposition of the gaseous compounds which results in deposition growth upon the surface of the rod. Single crystal semiconductor bodies are produced according to the process by avoiding poly-growth conditions through the in situ continuously pulled virgin slim rod, preheating of the slim rod for entry into the chemical vapor deposition chamber wherein the rod is simultaneously heated or maintained at reaction temperature conditions while being exposed or contacted with elected thermally decomposable gaseous compounds and continuously drawn through the chemical vapor deposition chamber reaction zone resulting in an enlarged single crystal semiconductor body which is withdrawn continuously from the chemical vapor deposition chamber.

REFERENCES:
patent: 3011877 (1961-12-01), Schweickert et al.
patent: 3036892 (1962-05-01), Siebertz
patent: 3146123 (1964-08-01), Bischoff et al.
patent: 3147141 (1964-09-01), Ishizvica
patent: 3341376 (1967-09-01), Sperke et al.
patent: 3496037 (1970-02-01), Jackson, Jr. et al.
patent: 3508962 (1970-04-01), Manasevit et al.
patent: 3969163 (1976-07-01), Wakefield
patent: 4147814 (1979-04-01), Yatsurugi et al.
Solid State Technology, Jul. 1977, "Automation in CVD Processing" by Richard Rosler and Walter Benzing, pp. 27-33.

Affiliated with

Also associated with

Rating

Gas curtain continuous chemical vapor deposition production of s does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Gas curtain continuous chemical vapor deposition production of s, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Gas curtain continuous chemical vapor deposition production of s will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1842754