Thyristor

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357 20, 357 60, 357 65, H01L 2974

Patent

active

039992110

ABSTRACT:
A semiconductor switching device is described in which a control electrode is disposed on a base zone adjacent to an emitter zone. The control electrode has at least one straight edge portion parallel to an adjacent straight border edge portion of the emitter zone. The parallel edges are also parallel to a [110] crystallographic direction of the semiconductor crystal which has a <111> crystal orientation; thus providing optimum firing of the device.

REFERENCES:
patent: 3344323 (1967-09-01), Einthoven et al.
patent: 3585714 (1968-09-01), Li
patent: 3761785 (1973-09-01), Pruniaux

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