Gapfill of semiconductor structure using doped silicate glasses

Details Gapfill of semiconductor structure using doped silicate glasses Gapfill of semiconductor structure using doped silicate glasses

1997-09-30

2000-08-01

Powell, William

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

438632, 438633, 438645, 438646, 438692, 438760, 438698, H01L 21302

Patent

active

060966548

ABSTRACT:
Improved gap fill of narrow spaces is achieved by using a doped silicate glass having a dopant concentration in a bottom portion thereof which is greater than an amount which causes surface crystal growth and in an upper portion thereof having a lower dopant concentration such that the overall dopant concentration of the doped silicate glass is below that which causes surface crystal growth.

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patent: 5716890 (1998-02-01), Yao
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IBM Technical Disclosure Bulletin, vol. 31, No. 11, dated Apr. 1989 entitled Automatic Unlimited Dynamic Memory Relocation.

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