Gap forming pattern fracturing method for forming optical...

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Electron beam imaging

Reexamination Certificate

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C430S005000

Reexamination Certificate

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07011926

ABSTRACT:
Within a charged particle beam exposure method for forming a patterned resist layer there is employed separating at least one adjacent pair of fractured pattern elements employed in forming a contiguous latent pattern within a blanket resist layer a gap. By employing the gap, a patterned resist layer formed incident to development of the blanket resist layer is formed with enhanced pattern fidelity and enhanced critical dimension control.

REFERENCES:
patent: 5241185 (1993-08-01), Meiri et al.
patent: 5629772 (1997-05-01), Ausschnitt
patent: 5667923 (1997-09-01), Kanata
patent: 5804339 (1998-09-01), Kim
patent: 5885748 (1999-03-01), Ohnuma
patent: 5994009 (1999-11-01), Tzu et al.
patent: 6180289 (2001-01-01), Hirayanagi

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