Gap filling method and method for forming semiconductor...

Details Gap filling method and method for forming semiconductor... Gap filling method and method for forming semiconductor...

2007-04-13

2010-12-21

Vu, David (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S102000, C438S761000, C438S763000

Reexamination Certificate

active

07855145

ABSTRACT:
A gap filling method and a method for forming a memory device, including forming an insulating layer on a substrate, forming a gap region in the insulating layer, and repeatedly forming a phase change material layer and etching the phase change material layer to form a phase change material layer pattern in the gap region.

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R-Y Kim et al, “Structural properties of Ge2Sb2Te5 thin films by metal organic chemical vapor deposition for phase change memory applications”, 2006, Applied Physics Letters, vol. 89, 102107.

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