Etching a substrate: processes – Gas phase etching of substrate – Etching inorganic substrate
Reexamination Certificate
2008-04-01
2008-04-01
Deo, Duy-Vu N. (Department: 1792)
Etching a substrate: processes
Gas phase etching of substrate
Etching inorganic substrate
C216S080000
Reexamination Certificate
active
10482434
ABSTRACT:
GaN crystal having few dislocations is grown by using together ELO-mask and defect-seeding-mask means. ELO masks make it so that GaN crystal does not grow directly, but grows laterally; defect-seeding masks make it so that closed defect-gathering regions in which defects are concentrated are grown.Any of the materials SiN, SiON or SiO2is utilized for the ELO mask, while any of the materials Pt, Ni or Ti is utilized for the defect-seeding masks. With a sapphire, GaAs, spinel, Si, InP, SiC, etc. single-crystal substrate, or one in which a GaN buffer layer is coated onto a single-crystal substrate of these, as an under-substrate, the ELO mask and defect-seeding masks are provided complementarily and GaN is vapor-phase deposited.
REFERENCES:
patent: 6413627 (2002-07-01), Motoki et al.
patent: 6667184 (2003-12-01), Motoki et al.
patent: 03-116927 (1991-05-01), None
patent: H08-064791 (1996-03-01), None
patent: H10-312971 (1998-11-01), None
patent: 2000-012900 (2000-01-01), None
patent: 2000-022212 (2000-01-01), None
patent: 2001-185498 (2001-07-01), None
patent: 2001-288000 (2001-10-01), None
patent: 2002270516 (2002-09-01), None
patent: 2002-335051 (2002-11-01), None
patent: WO-99-023693 (1999-05-01), None
A. Sakai and A. Usui, “Reduction of Dislocation Density in GaN Films by Epitaxial Lateral Overgrowth,” Jpn. J. Appl. Phys., vol. 68, No. 7 (1999).
A. Usui, “Thick Layer Growth of GaN by Hydride Vapor Phase Epitaxy,” Transactions of the Institute of Electronics, Information and Communication Engineers, C-11, vol. J81-C-11, No. 1 (Jan. 1998).
K. Motoki, et al., “Preparation of Large Freestanding GaN Substrates by Hydride Vapor Phase Epitaxy Using GaAs as a Starting Substrate,” Jpn. J. Appl. Phys. vol. 40 (2001) pp. L140-L143.
Akita Katsushi
Okahisa Takuji
Deo Duy-Vu N.
George Patricia A.
Judge James
Sumitomo Electric Industries Ltd.
LandOfFree
Gallium-nitride deposition substrate, method of... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Gallium-nitride deposition substrate, method of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Gallium-nitride deposition substrate, method of... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3943114