Active solid-state devices (e.g. – transistors – solid-state diode – Including semiconductor material other than silicon or... – Group iii-v compound
Reexamination Certificate
2008-12-02
2011-10-25
Dang, Phuc (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Including semiconductor material other than silicon or...
Group iii-v compound
C257S091000, C257S628000, C372S045013, C372S046012
Reexamination Certificate
active
08044493
ABSTRACT:
A GaAs semiconductor substrate includes a main surface (10m) having an inclined angle of 6° to 16° with respect to a (100) plane (10a), and a concentration of chlorine atoms on the main surface (10m) is not more than 1×1013cm−2. Further, a method of manufacturing a GaAs semiconductor substrate includes a polishing step of polishing a GaAs semiconductor wafer, a first cleaning step of cleaning the polished GaAs semiconductor wafer, an inspection step of inspecting a thickness and a main surface flatness of the GaAs semiconductor wafer subjected to the first cleaning, and a second cleaning step of cleaning the inspected GaAs semiconductor wafer with one of an acid other than hydrochloric acid and an alkali. Thereby, a GaAs semiconductor substrate that allows to obtain a group III-V compound semiconductor device having high properties even when at least one group III-V compound semiconductor layer containing not less than three elements is grown on a main surface, and a method of manufacturing the same are provided.
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J.L. Zilko, et al., Auger Electron Spectroscopy Study of GaAs Substrate Cleaning Procedures, J. Electrochem. Soc., Feb. 1982, vol. 129, No. 2, pp. 406-408.
Dang Phuc
Drinker Biddle & Reath LLP
Sumitomo Electric Industries Ltd.
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