GaAs semiconductor substrate and fabrication method thereof

Details GaAs semiconductor substrate and fabrication method thereof GaAs semiconductor substrate and fabrication method thereof

2007-10-09

2009-11-17

Dickey, Thomas L (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

With means to control surface effects

In compound semiconductor material

C257SE29089, C134S003000

Reexamination Certificate

active

07619301

ABSTRACT:
A GaAs semiconductor substrate includes a surface layer. When an atomic ratio is to be calculated using a 3d electron spectrum of Ga atoms and As atoms measured at the condition of 10° for the photoelectron take-off angle θ by X-ray photoelectron spectroscopy, the structural atomic ratio of all Ga atoms to all As atoms (Ga)/(As) at the surface layer is at least 0.5 and not more than 0.9, the ratio of As atoms bound with O atoms to all Ga atoms and all As atoms (As—O)/{(Ga)+(As)} at the surface layer is at least 0.15 and not more than 0.35, and the ratio of Ga atoms bound with O atoms to all Ga atoms and all As atoms (Ga—O)/{(Ga)+(As)} at the surface layer is at least 0.15 and not more than 0.35. Accordingly, there is provided a GaAs semiconductor substrate having a surface cleaned to an extent allowing removal of impurities and oxides at the surface by at least thermal cleaning of the substrate.

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European Search Report issued in European Patent Application No. EP 07019734 dated Apr. 15, 2009.

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